NMOS logic circuits using 4H-SiC MOSFETs for high temperature applications

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 1143-1146

  Le Huu, M ^a   Schrey, F F ^a   Grieb, M ^a   Schmitt, H ^b   Haublein V ^b   Bauer, A J ^b   Ryssel, H ^b,c   Frey, L ^b,c  

^a ROBERT BOSCH GMBH   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^c Department of Electron Devices ^*  (Germany)

Author keywords

High temperature electronics; Logic gates; Mos reliability; Nmos; Tddb

Indexed keywords

HIGH TEMPERATURE APPLICATIONS; HIGH TEMPERATURE OPERATIONS; LOGIC CIRCUITS; LOGIC GATES; MOSFET DEVICES; SILICON CARBIDE; TIMING CIRCUITS;

4H-SIC MOSFETS; CONSTANT VOLTAGE STRESS; HIGH-TEMPERATURE ELECTRONICS; MOS RELIABILITY; NMOS; OPERATING FIELDS; TDDB; TUNNELING BARRIER HEIGHTS;

COMPUTER CIRCUITS;

EID: 77955462477     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.1143     Document Type: Conference Paper

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