Electrical and optical activation studies of Si-implanted GaN

Journal of Electronic Materials

Volumn 34, Issue 8, 2005, Pages 1157-1164

  Fellows, James A ^a   Yeo, Y K ^a   Ryu, Mee Y I ^b   Hengehold, R L ^a  

^a AIR FORCE INSTITUTE OF TECHNOLOGY   (United States)

^b Kangwon National University   (South Korea)

Author keywords

Activation; GaN; Hall effect measurement; Implantation; Mobility; Photoluminescence (PL)

Indexed keywords

ANNEALING; APPROXIMATION THEORY; FUNCTIONS; HIGH TEMPERATURE EFFECTS; IONS; PHOTOLUMINESCENCE; SAMPLING; SILICON;

ACTIVATION; HALL-EFFECT MEASUREMENT; IMPLANTATION; MOBILITY;

GALLIUM NITRIDE;

EID: 24144435401     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0245-8     Document Type: Article

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