Contact resistance reduction to FinFET source/drain using novel dielectric dipole schottky barrier height modulation method

IEEE Electron Device Letters

Volumn 32, Issue 7, 2011, Pages 862-864

  Coss, Brian E ^a   Smith, Casey ^b   Loh, Wei Yip ^b   Majhi, Prashant ^b   Wallace, Robert M ^a   Kim, Jiyoung ^a   Jammy, Raj ^b  

^a The University of Texas at Dallas   (United States)

^b SEMATECH   (United States)

Author keywords

Contact resistance; FinFETS; semiconductor insulator interfaces; semiconductor metal interfaces

Indexed keywords

CONTACT INTERFACE; CONTACT RESISTIVITIES; CONTROL WAFERS; DEVICE PERFORMANCE; DIELECTRIC TUNING; DRIVE CURRENTS; FERMI LEVEL PINNING; FINFETS; KEY MATERIALS; RESISTANCE REDUCTION; SCHOTTKY BARRIER HEIGHT MODULATION; SCHOTTKY BARRIER HEIGHTS; SEMICONDUCTOR-INSULATOR INTERFACE; SEMICONDUCTOR-METAL INTERFACES; SPECIFIC CONTACT RESISTIVITY; THIN LAYERS;

CONTACT RESISTANCE; DIELECTRIC MATERIALS; INTEGRATED CIRCUITS; SCHOTTKY BARRIER DIODES; SILICON WAFERS;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 79959798426     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2148091     Document Type: Article

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