SCOPUS 정보 검색 플랫폼

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

Contact resistance reduction to FinFET source/drain using dielectric dipole mitigated schottky barrier height tuning

(8) Coss, B E a Smith, C b Loh, W Y b Chung, K J a Majhi, P b Wallace, R M a Kim, J a Jammy, R b

a UNIVERSITY OF TEXAS AT DALLAS (United States)

b SEMATECH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MATERIALS; CMOSFETS; CONTACT FORMATION; FINFETS; RESISTANCE REDUCTION; SCHOTTKY BARRIER HEIGHTS; SOURCE/DRAIN RESISTANCES; SPECIFIC CONTACT RESISTIVITY;

CONTACT RESISTANCE; ELECTRON DEVICES; INTEGRATED CIRCUITS; SCHOTTKY BARRIER DIODES; SILICIDES; TUNING;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 79951840723 PISSN: 01631918 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/IEDM.2010.5703426 Document Type: Conference Paper

Times cited : (3)

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