Field emission from atomically thin edges of reduced graphene oxide

ACS Nano

Volumn 5, Issue 6, 2011, Pages 4945-4952

  Yamaguchi, Hisato ^a   Murakami, Katsuhisa ^b,g   Eda, Goki ^c   Fujita, Takeshi ^d   Guan, Pengfei ^d   Wang, Weichao ^e   Gong, Cheng ^e   Boisse, Julien ^a,f   Miller, Steve ^a   Acik, Muge ^e   Cho, Kyeongjae ^e   Chabal, Yves J ^e   Chen, Mingwei ^d   Wakaya, Fujio ^b   Takai, Mikio ^b   Chhowalla, Manish ^a  

^a Rutgers The State University of New Jersey   (United States)

^b OSAKA UNIVERSITY   (Japan)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

^d TOHOKU UNIVERSITY   (Japan)

^e The University of Texas at Dallas   (United States)

^f UNIVERSITÉ DE LYON   (France)

^g UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

atomically thin edge; chemically derived grapheme; field electron emission; field emission pattern; interference; low threshold field; reduced graphene oxide

Indexed keywords

CHEMICALLY DERIVED GRAPHEME; FIELD ELECTRON EMISSIONS; FIELD-EMISSION PATTERNS; LOW THRESHOLDS; REDUCED GRAPHENE OXIDE; THIN EDGE;

ELECTRON BEAMS; ELECTRON OPTICS; ELECTRONS; ETHERS; FIELD EMISSION; GRAPHENE; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INFRARED SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON EMISSION;

EID: 79959781014     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn201043a     Document Type: Article

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