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Volumn 282, Issue 5393, 1998, Pages 1471-1473

Low-field electron emission from undoped nanostructured diamond

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT DENSITY; DIAMONDS; ELECTRIC FIELD EFFECTS; FERMI LEVEL; FIELD EMISSION CATHODES; HEAT TREATMENT; HYDROGEN; NANOSTRUCTURED MATERIALS; PLASMAS;

EID: 0032553568     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.282.5393.1471     Document Type: Article
Times cited : (397)

References (24)
  • 15
    • 3643148518 scopus 로고    scopus 로고
    • note
    • -8 torr base pressure at room temperature. As described previously (7), a voltage up to 2 kV was applied to a spherical-tipped molybdenum anode probe (tip radius of curvature ≅ 0.5 mm) to collect electrons emitted from the cathode diamond surface. A precision stepper controller (3.3 μm step size) was used to control the movement of the anode toward the cathode, and the emission current-voltage (I-V) characteristics were measured as a function of the anode-cathode distance. The obtained I-V data were analyzed using the Fowler-Nordheim theory (22), taking into consideration the variation of electrical field across the cathode surface and assuming a broad distribution in emission properties among the emitting tips (13). Capacitance was measured as the anode position changed to better determine the anode-cathode distance. A sphere-to-plane model was used to fit the capacitance data and estimate the position where the anode touched the cathode surface (13). The capacitance measurements also allowed problems - such as arcing, missteps of the probe, moving dust particles, or loose samples -to be detected, because they introduce discontinuities in an otherwise smooth capacitance-distance curve. The standard deviation of the capacitance about the fit corresponds to a 3 μm uncertainty out of a 100-μm spacing.
  • 16
    • 3643099579 scopus 로고    scopus 로고
    • note
    • 2 (that is, 1 μA over the pixel area, as is typically required for display applications) was then calculated and used as a figure of merit to compare various emitter samples. Note that we do not directly calculate the local fields on the tips of the emitters; instead, all of the field values are for the macroscopic electric field well above the cathode surface where the field is uniform and independent of the surface roughness. This macroscopic field is actually the relevant parameter for device applications. Using this field also allows us to avoid making strong assumptions about the emission physics, because the electronic properties of the emitters cannot be easily separated from the geometric field enhancement factors.
  • 23
    • 0026141088 scopus 로고
    • J. He et al., Surf. Sci. 246, 348 (1991).
    • (1991) Surf. Sci. , vol.246 , pp. 348
    • He, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.