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Applied Physics Letters

Volumn 96, Issue 2, 2010, Pages

Fabrication of graphene nanogap with crystallographically matching edges and its electron emission properties

(7) Wang, H M a Zheng, Z a Wang, Y Y a Qiu, J J b Guo, Z B b Shen, Z X a Yu, T a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b DATA STORAGE INSTITUTE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED RESEARCH; CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL FIELD; ELECTRON EMISSION PROPERTIES; FOWLER-NORDHEIM; GRAPHENES; HIGH VOLTAGE; HIGH-VACUUM CHAMBERS; I - V CURVE; LOW BIAS; MODEL FIT; NANO-GAP; SI SUBSTRATES; SPACE CHARGE LIMITED FLOW; VACUUM ELECTRONIC DEVICES; VACUUM NANOELECTRONICS;

CURVE FITTING; ELECTRON EMISSION; GRAPHENE; GRAPHITE; SILICON COMPOUNDS; VACUUM;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 74549169856 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3291110 Document Type: Article

Times cited : (56)

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