Nanodiamod lateral device field emission diode fabricated by electron beam lithography

Diamond and Related Materials

Volumn 19, Issue 2-3, 2010, Pages 252-255

  LeQuan, X C ^a   Choi, B K ^a   Kang, W P ^a   Davidson, J L ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

Electron beam lithography; Lateral device; Nanodiamond film; Nitrogen incorporation

Indexed keywords

BULK MATERIALS; DIAMOND NUCLEATION; ELECTRODE DISTANCES; ELECTRON EMISSION CURRENTS; FIELD EMISSION DIODE; FIELD EMITTER; HIGH RESOLUTION; LATERAL DEVICE; MECHANICAL ABRASION; MICROWAVE CHEMICAL VAPOR DEPOSITION; NANO-DIAMOND POWDER; NANODIAMOND FILMS; NITROGEN INCORPORATION; SILICON-ON-INSULATOR SUBSTRATES; ULTRA-SONICATION;

DIAMONDS; ELECTRON BEAMS; ELECTRONS; FIELD EMISSION; FIELD EMISSION CATHODES; NITROGEN; PLASMA DEPOSITION;

ELECTRON BEAM LITHOGRAPHY;

EID: 74849131038     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2009.10.014     Document Type: Article

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