Effect of ReRAM-stack asymmetry on read disturb immunity

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 134-138

  Terai, Masayuki ^a   Kotsuji, Setsu ^a   Hada, Hiromitsu ^a   Iguchi, Noriyuki ^a   Ichihashi, Toshinari ^a   Fujieda, Shinji ^a  

^a NEC CORPORATION   (Japan)

Author keywords

1T1R; Read disturb; ReRAM; Resistive switch; RRAM; Ta2O5; TiO2

Indexed keywords

1T1R; READ DISTURB; RERAM; RESISTIVE SWITCH; RRAM; TA2O5; TIO2;

ANODIC OXIDATION; FILAMENTS (LAMP); SWITCHING SYSTEMS;

TANTALUM;

EID: 70449091864     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173238     Document Type: Conference Paper

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