Self-organization of mesoscopically ordered parallel Gd-silicide nanowire arrays on a Si (110) -16×2 surface: A massively parallel active architecture

Applied Physics Letters

Volumn 98, Issue 19, 2011, Pages

  Hong, Ie Hong ^a   Tsai, Yung Feng ^a   Chen, Tsung Ming ^a  

^a NATIONAL CHIAYI UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE LENGTH; CHAIN STRUCTURE; EMPTYSTATE; NANOELECTRONIC DEVICES; NANOWIRE ARRAYS; PARALLEL ARRAYS; SELF-ORGANIZATIONS; SI(110);

ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; GADOLINIUM; NANOELECTRONICS; NANOWIRES;

SILICIDES;

EID: 79959674209     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3590199     Document Type: Article

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24. See supplementary material at http://dx.doi.org/10.1063/1.3590199 E-APPLAB-98-092119 in which the up-down buckling configurations of the left and right linear chains of Gd-silicide NWs are clearly revealed in their corrugation profiles (L and R), as shown in Fig. S1.