Formation of hexagonal Gd disilicide nanowires on Si(100)

Applied Physics Letters

Volumn 82, Issue 16, 2003, Pages 2619-2621

  Lee, Dohyun ^a   Kim, Sehun ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRODEPOSITION; MOLECULAR STRUCTURE; SCANNING TUNNELING MICROSCOPY; SILICON WAFERS;

SILICON NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 0037883745     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1569654     Document Type: Article

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