Robust one-dimensional metallic band structure of silicide nanowires

Physical Review Letters

Volumn 95, Issue 20, 2005, Pages

  Yeom, H W ^a   Kim, Y K ^a   Lee, E Y ^a   Ryang, K D ^a   Kang, P G ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC CHAIN SYSTEMS; ELECTRON FILLING; ELECTRONIC BANDS; FREE ELECTRON;

ANISOTROPY; ELECTRON BEAMS; ELECTRONIC STRUCTURE; FERMI LEVEL; NANOSTRUCTURED MATERIALS; ROBUSTNESS (CONTROL SYSTEMS);

BAND STRUCTURE;

EID: 28844439626     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.95.205504     Document Type: Article

References (24)

1. R.F. Service, Science 294, 2442 (2001) and references therein. SCIEAS 0036-8075 10.1126/science.294.5551.2442
2. J. Lee, Phys. Rev. Lett. 93, 166403 (2004) and references therein. PRLTAO 0031-9007 10.1103/PhysRevLett.93.166403
3. L.C. Venema, Science 283, 52 (1999). SCIEAS 0036-8075 10.1126/science.283.5398.52
4. J. Nogami, B.Z. Liu, M.V. Katkov, C. Ohbuchi, and N.O. Birge, Phys. Rev. B PRBMDO 0163-1829 63, 233305 (2001). 10.1103/PhysRevB.63.233305
5. C. Preinesberger, S. Vandré, T. Kalka, and M. Dähne-Prietsch, J. Phys. D: Appl. Phys. 31, L43 (1998). JPAPBE 0022-3727 10.1088/0022-3727/31/ 12/001
6. B.Z. Liu and J. Nogami, Surf. Sci. 488, 399 (2001). SUSCAS 0039-6028 10.1016/S0039-6028(01)01159-1
7. B.Z. Liu and J. Nogami, J. Appl. Phys. 93, 593 (2003). JAPIAU 0021-8979 10.1063/1.1516621
8. C. Preinesberger, S.K. Becker, S. Vandré, T. Kalka, and M. Dähne, J. Appl. Phys. 91, 1695 (2002). JAPIAU 0021-8979 10.1063/1.1430540
9. B.Z. Liu and J. Nogami, Nanotechnology 14, 873 (2003). NNOTER 0957-4484 10.1088/0957-4484/14/8/306
10. Y. Chen, D.A.A. Ohlberg, and R.S. Williams, J. Appl. Phys. 91, 3213 (2002). JAPIAU 0021-8979 10.1063/1.1428807
11. C. Ohbuchi and J. Nogami, Phys. Rev. B PRBMDO 0163-1829 66, 165323 (2002). 10.1103/PhysRevB.66.165323
12. Y. Chen, D.A.A. Ohlberg, G. Medeiros-Ribeiro, Y.A. Chang, and R.S. Williams, Appl. Phys. Lett. 76, 4004 (2000). APPLAB 0003-6951 10.1063/1.126848
13. Y. Chen, D.A.A. Ohlberg, and R.S. Williams, Mater. Sci. Eng. B MSBTEK 0921-5107 87, 222 (2001). 10.1016/S0921-5107(01)00734-6
14. H. Okino, Appl. Phys. Lett. 86, 233108 (2005); APPLAB 0003-6951 10.1063/1.1948519
15. M. Aono (to be published).
16. D. Lee and S. Kim, Appl. Phys. Lett. 82, 2619 (2003). APPLAB 0003-6951 10.1063/1.1569654
17. B.Z. Liu and J. Nogami, Surf. Sci. 540, 136 (2003). SUSCAS 0039-6028 10.1016/S0039-6028(03)00826-4
18. For a large area STM image, see http://ipap.yonsei.ac.kr/~cawl/home/ Upload/NWGdSi(100).gif.
19. R.I.G. Uhrberg and G.V. Hansson, Crit. Rev. Solid State Mater. Sci. CCRSDA 1040-8436 17, 133 (1991).
20. C. Rogero, Phys. Rev. B PRBMDO 0163-1829 69, 045312 (2004). 10.1103/PhysRevB.69.045312
21. H.W. Yeom, Phys. Rev. Lett., 82, 4898 (1999). PRLTAO 0031-9007 10.1103/PhysRevLett.82.4898
22. J.N. Crain, Phys. Rev. Lett. 90, 176805 (2003). This work reported the metallic phase of Si(553)-Au with both half- and quarter-filled bands but our ARP/STM study disclosed a metal-insulator transition at 100-250 K. PRLTAO 0031-9007 10.1103/PhysRevLett.90.176805
23. J.R. Ahn, H.W. Yeom, H.S. Yoon, and I.-W. Lyo, Phys. Rev. Lett. 91, 196403 (2003). PRLTAO 0031-9007 10.1103/PhysRevLett.91.196403
24. J.R. Ahn, P.G. Kang, K.D. Ryang, and H.W. Yeom, Phys. Rev. Lett. 95, 196402 (2005). PRLTAO 0031-9007 10.1103/PhysRevLett.95.196402