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Applied Physics A: Materials Science and Processing

Volumn 80, Issue 6, 2005, Pages 1311-1313

Unidirectional hexagonal rare-earth disilicide nanowires on vicinal Si(100)-2×1

(8) Lee, D a Lim, D K a Bae, S S a Kim, S a Ragan, R b Ohlberg, D A A b Chen, Y b,c Williams, R Stanley b

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b HEWLETT PACKARD LABORATORIES (United States)

c UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; LATTICE CONSTANTS; NANOSTRUCTURED MATERIALS; SCANNING TUNNELING MICROSCOPY; SILICON; SUBSTRATES; SURFACE PHENOMENA; TEMPERATURE CONTROL; ULTRAHIGH VACUUM;

GROWTH TEMPERATURE; LATTICE MISMATCH; NANOWIRES; VICINAL SURFACES;

RARE EARTH COMPOUNDS;

EID: 16244409309 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-004-3158-0 Document Type: Article

Times cited : (16)

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