Growth and electrical characterization of GdSi1.7 epilayers formed by channeled ion beam synthesis

Journal of Applied Physics

Volumn 91, Issue 6, 2002, Pages 3664-3668

  Hogg, S M ^a   Vantomme, A ^a   Wu, M F ^b  

^a KU LEUVEN   (Belgium)

^b PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; DYNAMIC ANNEALING; ELECTRICAL CHARACTERIZATION; HIGH QUALITY; ION BEAM SYNTHESIS; PRECIPITATE GROWTH; ROOM-TEMPERATURE RESISTIVITY; SILICIDE LAYERS; SUBSTRATE TEMPERATURE;

SILICIDES;

ION BEAMS;

EID: 0037087488     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1448408     Document Type: Article

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