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Volumn 104, Issue 7, 2008, Pages

Effect of strained-Si layer thickness on dislocation distribution and SiGe relaxation in strained-Si/SiGe heterostructures

(5) Lu, Jinggang a Rozgonyi, George a Seacrist, Mike b Chaumont, Michelle c Campion, Alan c

a North Carolina State University (United States)

b MEMC Electronic Materials Inc (United States)

c UNIVERSITY OF TEXAS AT AUSTIN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALS; DEFECT DENSITY; ETCHING; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SPECTRUM ANALYSIS; TENSILE STRESS;

CONTINUOUS RELAXATIONS; DEFECT ETCHINGS; DISLOCATION DISTRIBUTIONS; HETEROSTRUCTURES; IN SITU THERMAL ANNEALING; PILE-UPS; RELAXATION DEGREES; RESIDUAL STRAINS; SI LAYERS; SIGE LAYERS; SUBCRITICAL; SUPERCRITICAL; TENSILE; THREADING DISLOCATIONS;

SILICON ALLOYS;

EID: 54049144252 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2986940 Document Type: Article

Times cited : (2)

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