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Volumn 98, Issue 25, 2011, Pages

High temperature (1000°C) compatible Y-La-Si-O silicate gate dielectric in direct contact with Si with 7.7 Å equivalent oxide thickness

(6) Dubourdieu, C a,b Cartier, E a Bruley, J a Hopstaken, M a Frank, M M a Narayanan, V a

a IBM T J WATSON RESEARCH CENTER (United States)

b CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT CONTACT; EQUIVALENT OXIDE THICKNESS; FLAT-BAND VOLTAGE; HIGH TEMPERATURE; LANTHANUM SILICATES; METAL-OXIDE-SEMICONDUCTOR CAPACITORS;

DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; LANTHANUM OXIDES; RAPID THERMAL ANNEALING; RARE EARTH ELEMENTS; SILICATES; SILICON OXIDES; YTTRIUM; YTTRIUM ALLOYS;

SEMICONDUCTING SILICON;

EID: 79959616418 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3600790 Document Type: Article

Times cited : (3)

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