Fabrication of Silicon-on-Nothing Structure by Substrate Engineering Using the Empty-Space-in-Silicon Formation Technique

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 1, 2004, Pages 12-18

  Sato, Tsutomu ^a   Mizushima, Ichiro ^a   Taniguchi, Shuichi ^a   Takenaka, Keiichi ^a   Shimonishi, Satoshi ^a   Hayashi, Hisataka ^a   Hatano, Masayuki ^a   Sugihara, Kazuyoshi ^a   Tsunashima, Yoshitaka ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Empty space in silicon (ESS); Hydrogen anneal; Microstructure transformation of silicon (MSTS); Silicon on insulator (SOI); Silicon on nothing (SON); Silicon surface migration; Substrate engineering; Transformation

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; CRYSTALS; HYDROGEN; MICROELECTROMECHANICAL DEVICES; MICROSTRUCTURE; PHOTONS; PIPE; SILICON ON INSULATOR TECHNOLOGY; TRENCHING; ULSI CIRCUITS; WAVEGUIDES;

EMPTY SPACE IN SILICON (ESS); HYDROGEN ANNEAL; MICROSTRUCTURE TRANSFORMATION OF SILICON (MSTS); SILICON ON INSULATOR (SOI); SILICON ON NOTHING (SON); SILICON SURFACE MIGRATION; SUBSTRATE ENGINEERING; TRANSFORMATION;

SILICON;

EID: 1842760714     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.12     Document Type: Article

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