Effect of carrier density on the surface morphology and optical properties of nanoporous GaN prepared by UV assisted electrochemical etching

Applied Physics Letters

Volumn 91, Issue 8, 2007, Pages

  Vajpeyi, A P ^a,d   Chua, S J ^a,b   Tripathy, S ^b   Fitzgerald, E A ^c  

^a SINGAPORE MIT ALLIANCE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c Massachusetts Institute of Technology

^d INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPRESSIVE STRESS; ELECTROCHEMICAL ETCHING; ELECTROLYTES; NANOPORES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; STRESS RELAXATION; SURFACE MORPHOLOGY;

DOPING DENSITY; PHONON MODES; REDSHIFT;

GALLIUM NITRIDE;

EID: 34548237035     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2772753     Document Type: Article

References (17)

1. F. Yun, M. A. Reshchikov, L. He, H. Morkoc, K. Inoki, and T. S. Kuan, Appl. Phys. Lett. 81, 22 (2002).
2. C. B. Soh, H. Hartono, S. Y. Chow, S. J. Chua, and E. A. Fitzgerald, Appl. Phys. Lett. 90, 053112 (2007).
3. H. Hartono, C. B. Soh, S. Y. Chow, S. J. Chua, and E. A. Fitzgerald, Appl. Phys. Lett. 90, 17917 (2007).
4. A. P. Vajpeyi, S. J. Chua, S. Tripathy, E. A. Fitzgerald, W. Liu, P. Chen, and L. S. Wang, Electrochem. Solid-State Lett. 8, G85 (2005).
5. A. P. Vajpeyi, S. Tripathy, S. J. Chua, and E. A. Fitzgerald, Physica E (Amsterdam) 28, 141 (2005).
6. Joshua Goldberger, Rongrui He, Yangfeng Zhang, Sangkwon Lee, Haoquan Yan, Heon-Jin Choi, and Peidong Yang, Nature (London) 422, 599 (2003).
7. Y. D. Wang, S. J. Chua, M. S. Sander, P. Chen, S. Tripathy, and C. G. Fonstad, Appl. Phys. Lett. 85, 816 (2004).
8. M. Mynbaeva, A. Titkov, A. Kryganovskii, V. Ratnikov, K. Mynbaev, H. Huhtinen, R. Laiho, and V. Dmitriev, Appl. Phys. Lett. 76, 1113 (2000).
9. R. S. Qhalid Fareed, V. Adivarahan, C. Q. Chen, S. Rai, E. Kuokstis, J. W. Yang, M. Asif Khan, J. Caissie, and R. J. Molnar, Appl. Phys. Lett. 84, 696 (2004).
10. D. J. Diaz, T. L. Williamson, I. Adesida, P. W. Bohn, and R. J. Molnar, J. Vac. Sci. Technol. B 20, 2375 (2002).
11. T. L. Williamson, D. J. Díaz, P. W. Bohn, and R. J. Molnar, J. Vac. Sci. Technol. B 22, 925 (2004).
12. I. M. Tiginyanu, V. V. Ursaki, V. V. Zalamai, S. Langa, S. Hubbard, D. Pavlidis, and H. Foll, Appl. Phys. Lett. 83, 1551 (2003).
13. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu, William J. Schaff, Yoshiki Saito, and Yasushi Nanishi, Appl. Phys. Lett. 80, 3967 (2002).
14. D. Soltz and L. Cescato, J. Electrochem. Soc. 143, 2815 (1996).
15. E. F. Schubert, I. D. Goepfert, W. Grieshaber, and J. M. Redwing, Appl. Phys. Lett. 71, 921 (1997).
16. D. G. Zhao, S. J. Xu, M. H. Xie, S. Y. Tong, and H. Yang, Appl. Phys. Lett. 83, 677 (2003).
17. C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental, M. Rubin, and E. R. Weber, Phys. Rev. B 54, 17745 (1996).