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Volumn 18, Issue 24, 2006, Pages 2623-2625

Improved light extraction of nitride-based flip-chip light-emitting diodes via sapphire shaping and texturing

Author keywords

Chip shaping; Flip chip; GaN; Light emitting diode (LED); Surface texturing

Indexed keywords

ETCHING; FLIP CHIP DEVICES; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33845786075     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.886823     Document Type: Article
Times cited : (48)

References (9)
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  • 6
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    • "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening"
    • Feb
    • T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamuraa, "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening," Appl. Phys. Lett., vol. 84, pp. 855-857, Feb. 2004.
    • (2004) Appl. Phys. Lett. , vol.84 , pp. 855-857
    • Fujii, T.1    Gao, Y.2    Sharma, R.3    Hu, E.L.4    DenBaars, S.P.5    Nakamuraa, S.6
  • 7
    • 33745482395 scopus 로고    scopus 로고
    • "Fabrication of pyramidal patterned sapphire substrates for high-efficiency ingan-based light emitting diodes'"
    • Jun
    • D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, R. H. Horng, Y. S. Yu, and M. H. Pan, "Fabrication of pyramidal patterned sapphire substrates for high-efficiency ingan-based light emitting diodes'," J. Electrochem. Soc., vol. 153, pp. G765-G770, Jun. 2006.
    • (2006) J. Electrochem. Soc. , vol.153
    • Wuu, D.S.1    Wang, W.K.2    Wen, K.S.3    Huang, S.C.4    Lin, S.H.5    Horng, R.H.6    Yu, Y.S.7    Pan, M.H.8
  • 8
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    • "Study on sapphire surface preparation for iii-nitride heteroepitaxial growth by chemical treatments"
    • Sep
    • F. Dwikusuma, D. Saulys, and T. F. Kuech, "Study on sapphire surface preparation for iii-nitride heteroepitaxial growth by chemical treatments," J. Electrochem. Soc., vol. 49, pp. G603-G608, Sep. 2002.
    • (2002) J. Electrochem. Soc. , vol.49
    • Dwikusuma, F.1    Saulys, D.2    Kuech, T.F.3
  • 9
    • 22544446448 scopus 로고    scopus 로고
    • "Vertical electrode GaN-based light-emitting diode fabricated by selective wet etching technique"
    • May
    • S. J. Kim, "Vertical electrode GaN-based light-emitting diode fabricated by selective wet etching technique," Jpn. J. Appl. Phys., vol. 44, pp. 2921-2924, May 2005.
    • (2005) Jpn. J. Appl. Phys. , vol.44 , pp. 2921-2924
    • Kim, S.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.