Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE

Journal of Physics D: Applied Physics

Volumn 40, Issue 9, 2007, Pages 2881-2885

  Wei, T B ^a   Duan, R F ^a   Wang, J X ^a   Li, J M ^a   Huo, Z Q ^a   Ma, P ^a   Liu, Z ^a   Zeng, Y P ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; OPTICAL PROPERTIES; RAMAN SCATTERING; SAPPHIRE; THICK FILMS; VAPOR PHASE EPITAXY;

GAS REACTION; SPATIAL VARIATION; TAPERED INVERSION DOMAINS; X RAY ROCKING CURVE;

GALLIUM NITRIDE;

EID: 34247491147     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/9/032     Document Type: Article

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