Near-infrared-ultraviolet absorption cross sections for Ge nanocrystals in SiO2 thin films: Effects of shape and layer structure

Journal of Applied Physics

Volumn 109, Issue 9, 2011, Pages

  Uhrenfeldt, Christian ^a   Chevallier, Jacques ^a   Larsen, Arne Nylandsted ^a   Nielsen, Brian Bech ^a  

^a AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION CROSS SECTIONS; AVERAGE SIZE; BULK VALUE; CLOSE PACKED; DIELECTRIC FUNCTIONS; GE ATOM; GE NANOCRYSTALS; LAYER STRUCTURES; MATRIX; MIE THEORY; MULTI-LAYERED; MULTILAYER CONFIGURATION; MULTILAYERED CONFIGURATIONS; NANOCRYSTAL SIZES; NARROW SIZE DISTRIBUTIONS; OPTICAL ABSORPTION CROSS-SECTIONS; OPTICAL RESPONSE; OPTICAL TRANSMISSION MEASUREMENTS; QUANTUM CONFINEMENT EFFECTS; RANDOMLY DISTRIBUTED; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SELF-CONSISTENT PROCEDURES; SMALL CONCENTRATION; SPECTRAL RANGE; STRUCTURAL INFORMATION; THIN LAYERS; THIN-FILM INTERFERENCE;

ABSORPTION; ATOMS; FILM PREPARATION; GERMANIUM; INFRARED DEVICES; LIGHT ABSORPTION; LIGHT TRANSMISSION; MULTILAYER FILMS; MULTILAYERS; OPTICAL MULTILAYERS; OPTICAL PROPERTIES; QUANTUM CONFINEMENT; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON COMPOUNDS; SIZE DISTRIBUTION; TRANSMISSION ELECTRON MICROSCOPY;

NANOCRYSTALS;

EID: 79959514041     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3581015     Document Type: Article

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