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Applied Physics A: Materials Science and Processing

Volumn 81, Issue 5, 2005, Pages 1077-1082

The influence of oxide/nitride surface layers on diffusion in Si and SiGe

(4) Zangenberg, N R a Chevallier, J a Hansen, J L a Larsen, A Nylandsted a

a AARHUS UNIVERSITY (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; MOLECULAR BEAM EPITAXY; NITRIDES; SURFACE CHEMISTRY; SURFACES;

INTERSTITIALS; VACCANCIES;

SILICON COMPOUNDS;

EID: 23944496085 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-004-2958-6 Document Type: Article

Times cited : (3)

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