Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO 2 using parametric models

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 5, 2008, Pages 1332-1336

  Basa, P ^a   Petrik, P ^a   Fried, M ^a   Dana A ^b   Aydinli, A ^b   Foss, S ^c   Finstad, T G ^c  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b BILKENT UNIVERSITY   (Turkey)

^c UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; DIELECTRIC FUNCTIONS; EFFECTIVE MEDIUM THEORIES; GE NANOCRYSTALS; HIGH-TEMPERATURE ANNEALING; LAYER THICKNESS; NANOCRYSTAL SIZES; OSCILLATOR PARAMETERS; PARAMETRIC MODELS; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; SEMICONDUCTOR MODEL; SI SUBSTRATES;

GERMANIUM; PLASMA DEPOSITION; SILICON COMPOUNDS; SPECTROSCOPIC ELLIPSOMETRY;

NANOCRYSTALS;

EID: 70450197162     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200777773     Document Type: Conference Paper

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