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Volumn 15, Issue 10, 2007, Pages 6096-6101

Photoluminescence dependence of InGaN/GaN QW on embedded AlGaN δ-layer

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; DOPING (ADDITIVES); ELECTRONS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; WAVE FUNCTIONS;

EID: 34248554386     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.15.006096     Document Type: Article
Times cited : (5)

References (14)
  • 3
    • 33645920309 scopus 로고    scopus 로고
    • Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers
    • M-Shiqjiri, C. C. Chuo, J. T. Hsu, J. R. Yang, and H. Saijo, "Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers," J. Appl. Phys. 99, 073505-1-073505-6 (2006).
    • (2006) J. Appl. Phys , vol.99
    • M-Shiqjiri, C.1    Chuo, C.2    Hsu, J.T.3    Yang, J.R.4    Saijo, H.5
  • 9
    • 0034670787 scopus 로고    scopus 로고
    • Polarization charge screening and indium surface segregation in (In,Ga)N/GaN single and multiple quantum wells
    • O. Mayrock, H.-J. Wünsche, and F. Henneberger, "Polarization charge screening and indium surface segregation in (In,Ga)N/GaN single and multiple quantum wells," Phys. Rev. B 62, 16870-16880 (2000).
    • (2000) Phys. Rev. B , vol.62 , pp. 16870-16880
    • Mayrock, O.1    Wünsche, H.-J.2    Henneberger, F.3
  • 10
    • 0000070839 scopus 로고    scopus 로고
    • k-p method for strained wurtzite semiconductors
    • S. L. Chuang and C. S. Chang, "k-p method for strained wurtzite semiconductors," Phys. Rev. B 54, 2491-2504 (1996).
    • (1996) Phys. Rev. B , vol.54 , pp. 2491-2504
    • Chuang, S.L.1    Chang, C.S.2
  • 11
    • 0000237514 scopus 로고    scopus 로고
    • Small valence-band offsets at GaN/InGaN heterojunctions
    • C. G. Van de Walle and J. Neugebauer, "Small valence-band offsets at GaN/InGaN heterojunctions," Appl. Phys. Lett. 70, 2577-2579 (1997).
    • (1997) Appl. Phys. Lett , vol.70 , pp. 2577-2579
    • Van de Walle, C.G.1    Neugebauer, J.2
  • 12
    • 0033711192 scopus 로고    scopus 로고
    • Simulation and Optimization of 420nm InGaN/GaN Laser Diodes
    • J. Piprek, R. K. Sink, M. A. Hansen, J. E. Bowers, and S. P. Denbaars, "Simulation and Optimization of 420nm InGaN/GaN Laser Diodes," Proc. SPIE 3944-03, 28-39 (2000).
    • (2000) Proc. SPIE , vol.3944 -03 , pp. 28-39
    • Piprek, J.1    Sink, R.K.2    Hansen, M.A.3    Bowers, J.E.4    Denbaars, S.P.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.