Zero-shrink dimension evaluated for ArF-resist patterns measured by CD-SEM

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5038 II, Issue , 2003, Pages 861-865

  Kawada, Hiroki ^a   Iizumi, Takashi ^a   Otaka, Tadashi ^a  

^a HITACHI HIGH TECHNOLOGIES CORPORATION   (Japan)

Author keywords

Accuracy; ArF; CD SEM; Precision; Repeatabil ity; Reproducibility; Shrink; Slimming

Indexed keywords

COMPUTER SOFTWARE; DRY ETCHING; ELECTRON BEAMS; LITHOGRAPHY;

CRITICAL DIMENSION-SCANNING ELECTRON MICROSCOPE; LINE-WIDTH SLIMMING; ZERO-SHRINK DIMENSION;

SCANNING ELECTRON MICROSCOPY;

EID: 0141723591     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.483658     Document Type: Conference Paper

References (3)

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2. International technology roadmap for semiconductors 2002 update, pp. 150, 201.
3. C-H J. Wu, W-S. Huang, K-J R. Chen, C. N. Archie, and M.E. Lagus, "Investigation on the mechanism of the 193 nm resist linewidth reduction during the SEM measurement", Proc. Of SPIE, PP. 190-199, 2001.