SEM metrology for advanced lithographies

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6518, Issue PART 2, 2007, Pages

  Bunday, Benjamin ^a   Allgair, John ^a   Rice, Bryan J ^b   Byers, Jeff ^a   Avitan, Yohanan ^c   Peltinov, Ram ^c   Bar zvi, Maayan ^c   Adan, Ofer ^c   Swyers, John ^d   Shneck, Roni Z ^e  

^a SEMATECH   (United States)

^b INTEL CORPORATION   (United States)

^c Applied Materials Inc Israel   (Israel)

^d APPLIED MATERIALS INC   (United States)

^e BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

193nm immersion; Applied materials; ArF; DUV; EUV; iArF; ISMI; Photoresist; Resist; SEM based metrology; SEMATECH; Shrinkage; Slimming

Indexed keywords

NANOTECHNOLOGY; PHOTORESISTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SHRINKAGE; TRANSISTORS; WAVELENGTH;

APPLIED MATERIALS; SLIMMING;

LITHOGRAPHY;

EID: 35148830374     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.714203     Document Type: Conference Paper

References (10)

1. Burn J.Lin, Optical lithography - present and future challenges, TSMC, 2006.
2. Benedicte Mortini, Photosensitive resists for optical lithography, STMicroelectronics - France, 2006.
3. C.H.J, Wu et al., Investigation on the mechanism of the 193nm resist linewidth reduction during the SEM measurement, IBM, 2001.
4. Akerman L., Eytan G, et al., Investigation of possible ArF resist slimming mechanism, Applied Materials, 2006.
5. Habermas A., Hong D., Ross M., Livesay W., "193nm CD shrinkage under SEM: modeling the mechanism," Proceedings of the SPIE: Metrology, Inspection, and Process Control for Microlithography XVI (2002) v4689, pp 92-101, 2002.
6. Kevin Kemp and Stefan Wurm, EUV lithography, SEMATECH 2006.
7. G. Sundaram, N. Sullivan, T. Mai, C. Ke, "Low Impact Resist Metrology: The Use of Ultra Low Voltage for High Accuracy Performance," SPIE 2004: v5375, pp 675-685, 2004.
8. N. Sullivan, M. Mastovich, R. Dixson, P. Knutrud, B. Bunday, P. Fabre, and R. Brandom, "Electron Beam Metrology of 193 nm Resists at Ultra-Low Voltage," Proceedings of the SPIE: Metrology, Inspection, and Process Control for Microlithography XVII (2003), v5038, pp 483-492, 2003.
9. A. Habermas, D. Hong, M. Ross, and W. Livesay, "193 nm CD Shrinkage Under SEM: Modeling the Mechanism," SPIE 2002, v4689, pp 92-101, 2002.
10. Bunday, B., Azordegan, A., Vladar, A., Singh, B., Banke, B., Hartig, C., Archie, C., Joy, D., Solecky, E., Cao, G., Villarrubia, J., and Postek, M. "Unified Advanced Critical Dimension Scanning Electron Microscope (CD-SEM) Specification for sub-90 nm Technology (2006 Version)." ISMI Tech Transfer document ID# 04114595C-ENG, Dec 2006. Non-confidential, available on SEMATECH website, http://www.sematech.org.