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Journal of Materials Science: Materials in Electronics

Volumn 22, Issue 6, 2011, Pages 626-630

Electrical properties of pulsed laser deposited Bi 2Zn 2/3Nb 4/3O 7 thin films for high K gate dielectric application

(2) Sudheendran, K a James Raju, K C b

a UNIVERSITY OF AVEIRO (Portugal)

b UNIVERSITY OF HYDERABAD (India)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH ZINC NIOBATE; CAPACITANCE VOLTAGE; CMOS TECHNOLOGY; CURRENT VOLTAGE MEASUREMENT; DIELECTRIC LAYER; FIELD STRENGTHS; HIGH DIELECTRIC CONSTANTS; HIGH-K GATE DIELECTRICS; HIGH-PERFORMANCE LOGIC; INTERFACE QUALITY; METAL INSULATOR SEMICONDUCTOR CAPACITORS; OXIDE THICKNESS;

BISMUTH; CMOS INTEGRATED CIRCUITS; DIELECTRIC PROPERTIES; GATE DIELECTRICS; GATES (TRANSISTOR); LOGIC CIRCUITS; METAL INSULATOR BOUNDARIES; MIS DEVICES; NIOBIUM; NIOBIUM COMPOUNDS; OXIDE FILMS; PULSED LASER DEPOSITION; THIN FILMS; ZINC;

DIELECTRIC MATERIALS;

EID: 79958833362 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-010-0187-7 Document Type: Article

Times cited : (10)

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