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Solid-State Electronics

Volumn 39, Issue 6, 1996, Pages 841-849

C-V characterization of MOS capacitors in SOI structures

(4) Rustagi, S C a Mohsen, Z O a Chandra, S a Chand, A a

a INDIAN INSTITUTE OF TECHNOLOGY DELHI (India)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; CAPACITANCE; CAPACITORS; CARRIER CONCENTRATION; ELECTRIC PROPERTIES; NUMERICAL METHODS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THICKNESS MEASUREMENT;

BURIED OXIDE; CAPACITANCE VOLTAGE CHARACTERIZATION; DOPING DENSITY; GATE OXIDE; LAPLACE-POISSON ONE DIMENSIONAL EQUATION; MOS CAPACITORS; SILICON ON INSULATOR STRUCTURES;

MOS DEVICES;

EID: 0030164383 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(95)00395-9 Document Type: Article

Times cited : (9)

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