Effect of the amorphous-to-crystalline transition in Ba 0.5Sr0.5TiO3 thin films on optical and microwave dielectric properties

Journal of Physics D: Applied Physics

Volumn 42, Issue 4, 2009, Pages

  Venkata Saravanan, K ^a   Sudheendran, K ^a   Ghanashyam Krishna, M ^a   James Raju, K C ^a  

^a UNIVERSITY OF HYDERABAD   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT TEMPERATURES; AMORPHOUS-TO-CRYSTALLINE TRANSITION; ANNEALING PROCESS; CRYSTALLINE NATURE; CRYSTALLINE PHASE TRANSITION; CRYSTALLINE TRANSITION; DEFECT CENTRES; FUSED SILICA SUBSTRATES; HIGH TEMPERATURE; MICROWAVE DIELECTRIC CONSTANT; MICROWAVE DIELECTRIC PROPERTIES; MICROWAVE DIELECTRICS; POST DEPOSITION ANNEALING; RF-MAGNETRON SPUTTERING; STRUCTURAL PHASE TRANSITION; TIO;

AMORPHOUS FILMS; ANNEALING; BARIUM; CERAMIC CAPACITORS; CRYSTALLINE MATERIALS; DIELECTRIC WAVEGUIDES; ENERGY GAP; FUSED SILICA; LIGHT REFRACTION; MAGNETRON SPUTTERING; MICROWAVES; OPTICAL BAND GAPS; OXYGEN; OXYGEN VACANCIES; PERMITTIVITY; PHASE TRANSITIONS; REFRACTIVE INDEX; REFRACTOMETERS; SILICA; THIN FILMS;

OPTICAL FILMS;

EID: 67650097361     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/4/045401     Document Type: Article

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