Features of the capacitance-voltage characteristics in a MOS structure due to the oxide charge

Semiconductors

Volumn 42, Issue 11, 2008, Pages 1351-1354

  Bobrova, E A ^a   Omeljanovskaya, N M ^b  

^a LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 65249127506     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782608110213     Document Type: Article

References (11)

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