Structural, electronic, and magnetic properties of C-doped GaN nanoribbon

Journal of Applied Physics

Volumn 109, Issue 10, 2011, Pages

  Zheng, Fang Ling ^a   Zhang, Yan ^a   Zhang, Jian Min ^a   Xu, Ke Wei ^b  

^a SHAANXI NORMAL UNIVERSITY   (China)

^b XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMPTOTIC LIMITS; C ATOMS; C-DOPED; FIRST-PRINCIPLES CALCULATION; LOCAL EXPANSION; MAGNETIC NANODEVICES; NANORIBBONS; SINGLE LAYER; ZIGZAG EDGES;

CALCULATIONS; ENERGY GAP; GALLIUM NITRIDE; MAGNETIC MOMENTS; MAGNETIC PROPERTIES;

ATOMS;

EID: 79958795279     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3587161     Document Type: Conference Paper

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