Ga-rich limit of surface reconstructions on GaAs(001): Atomic structure of he (4 × 6) phase

Physical Review Letters

Volumn 93, Issue 26 I, 2004, Pages

  Ohtake, Akihiro ^a   Koćan, Pavel ^a,b   Seino, Kaori ^c   Schmidt, Wolf G ^c   Koguchi, Nobuyuki ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b CHARLES UNIVERSITY   (Czech Republic)

^c FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

REFLECTANCE DIFFERENCE SPECTROSCOPY (RDS); SURFACE RECONSTRUCTION; THERMAL VIBRATION; VACUUM CHAMBERS;

CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; DIMERS; LOW ENERGY ELECTRON DIFFRACTION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE; TITRATION; ULTRAHIGH VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 37649026880     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.266101     Document Type: Article

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28. We point out that the contrast between faulted and unfaulted As atoms in the c(8 × 2) reconstruction reverses at different bias voltages [Figs. 5(b) and 5(c)], in qualitative agreement with the recent DFT calculation [6].