Spectroscopic investigation on the origin of photoinduced carrier generation in semiconducting InGaO and InGaZnO films

Journal of Physical Chemistry C

Volumn 114, Issue 27, 2010, Pages 11962-11964

  Cho, Deok Yong ^a   Kim, Jeong Hwan ^a   Kim, Un Ki ^a   Chung, Yoon Jang ^a   Song, Jaewon ^a   Hwang, Cheol Seong ^a   Lee, Jae Min ^a   Oh, Se Jung ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CARRIER GENERATION; DEFECT STATE; ELECTRON HOLE PAIRS; OXYGEN DEFICIENCY; PHOTO-INDUCED; PHOTOINDUCED DEGRADATION; SEMICONDUCTING OXIDE; SEMICONDUCTING OXIDE FILMS; SPECTROSCOPIC INVESTIGATIONS; VALENCE BAND EDGES; VISIBLE LIGHT;

DEFECTS; ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; ION BOMBARDMENT; OXYGEN; PHOTODEGRADATION; SEMICONDUCTING FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

OXIDE FILMS;

EID: 77955317360     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp1038305     Document Type: Article

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