Charge retention phenomena in CT silicon nitride: Impact of technology and operating conditions

Journal of Vacuum Science and Technology B

Volumn 29, Issue 1, 2011, Pages

  Ghidini, G ^a   Galbiati, N ^a   Mascellino, E ^b   Scozzari, C ^a   Sebastiani, A ^a   Amoroso, S ^b   Compagnoni, C Monzio ^b   Spinelli, A S ^b   MacOni, A ^b   Piagge, R ^a   Del Vitto, A ^a   Alessandri, M ^a   Baldi, I ^a   Moltrasio, E ^a   Albini, G ^a   Grossi, A ^a   Tessariol, P ^a   Camerlenghi, E ^a   Mauri, A ^a  

^a Numonyx   (Italy)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ELECTRIC FIELDS; SILICON NITRIDE;

CHARGE LOSS; CHARGE REDISTRIBUTION; CHARGE RETENTION; INTERFACE TRAPS; OPERATING CONDITION; PROGRAMMING VOLTAGE; TRAPPED CHARGE; TUNNEL OXIDES;

ELECTRIC LOSSES;

EID: 79551642547     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3532541     Document Type: Conference Paper

References (11)

1. Y. Zhao, X. Wang, H. Shang, and M. H. White, Solid-State Electron. 0038-1101 50, 1667 (2006). 10.1016/j.sse.2006.07.010 (Pubitemid 44633303)
2. Y. Shin, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2005, 327.
3. Y. Park, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2006, 1.
4. Y. Wang and M. H. White, Solid-State Electron. 0038-1101 49, 97 (2005). 10.1016/j.sse.2004.06.009
5. J. J. Lee, S. H. Lee, H. Chae, B. Y. Choi, S. K. Sung, S. P. Kim, E. S. Cho, C. H. Lee, and D. Park, Proceedings of the IRPS, 2006, pp. 530-533.
6. E. Vianello, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2009, 83.
7. G. Ghidini, Microelectron. Eng. 86, 1822 (2009). 10.1016/j.mee.2009.03. 041
8. C. Scozzari, Proceedings of the ULIS, 2008.
9. H. Wong, M. C. Poon, Y. Gao, and T. C. W. Kok, J. Electrochem. Soc. 0013-4651 148, G275 (2001). 10.1149/1.1362552 (Pubitemid 33693561)
10. A. Sebastiani, J. Vac. Sci. Technol. B 27, 490 (2009). 10.1116/1.3025836
11. C. M. Compagnoni, A. Mauri, S. M. Amoroso, A. Maconi, and A. S. Spinelli, IEEE Trans. Electron Devices 0018-9383 56, 2008 (2009). 10.1109/TED.2009. 2026315