Properties of silicon nanoparticles embedded in SiNx deposited by microwave-PECVD

Nanotechnology

Volumn 20, Issue 41, 2009, Pages

  Delachat, F ^a   Carrada, M ^a   Ferblantier, G ^a   Grob, J J ^a   Slaoui, A ^a  

^a Faculté de Médecine   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITED LAYER; EXPERIMENTAL PARAMETERS; GAS RATIO; HIGH DENSITY; HIGH TEMPERATURE; MICROWAVE-ASSISTED; PHOTOLUMINESCENCE MEASUREMENTS; PRECURSOR GAS; RUTHERFORD BACKSCATTERING TECHNIQUES; SILICON NANOPARTICLES; TEM; THERMAL-ANNEALING;

MICROWAVES; NANOPARTICLES; PLASMA DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON NITRIDE; SILICON WAFERS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

AMMONIA; NANOPARTICLE; SILANE; SILICON; SILICON NITRIDE; NANOMATERIAL; SILICON DERIVATIVE;

ARTICLE; CHEMICAL COMPOSITION; ENERGY FILTERED TRANSMISSION ELECTRON MICROSCOPY; HIGH TEMPERATURE; MICROWAVE RADIATION; PHOTOLUMINESCENCE; PRIORITY JOURNAL; CHEMISTRY; NANOTECHNOLOGY;

AMMONIA; NANOPARTICLES; NANOSTRUCTURES; NANOTECHNOLOGY; SILICON; SILICON COMPOUNDS;

EID: 70349694561     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/41/415608     Document Type: Article

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