The performance improvement evaluation for SiGe-based IR detectors

Solid-State Electronics

Volumn 62, Issue 1, 2011, Pages 72-76

  Kolahdouz, M ^a   Afshar Farniya, A ^a   Ostling M ^a   Radamson, H H ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Bolometer; Epitaxy; IR detector; SiGe

Indexed keywords

EPITAXY; FACTORIAL METHODS; GE CONTENT; IR DETECTOR; LOW COSTS; METAL CONTACTS; NI SILICIDE; NOISE LEVELS; PERFORMANCE IMPROVEMENTS; PIXEL SIZE; SIGE; SIGE/SI; SILICIDATION; SINGLE-CRYSTALLINE; STATISTICAL ANALYSIS; THERMISTOR MATERIALS;

DETECTORS; GERMANIUM; INFRARED DETECTORS; NICKEL COMPOUNDS; PIXELS; PUMPS; SCANDIUM; SILICIDES; SILICON ALLOYS; THERMISTORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79957957447     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.01.010     Document Type: Article

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