SiGe quantum well thermistor materials

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 337-339

  Wissmar, S G E ^a   Radamsson, H H ^b   Yamamoto, Y ^c   Tillack, B ^c   Vieider, C ^a   Andersson, J Y ^a  

^a ACREO AB   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c IHP   (Germany)

Author keywords

Selective epitaxy growth; SiGe; Thermistor

Indexed keywords

CRYSTAL GROWTH; GERMANIUM; PUMPS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SILICON; SILICON ALLOYS; THERMISTORS;

EXCESS NOISES; HETEROSTRUCTURES; HIGH-PERFORMANCE; MONOCRYSTALLINE; SELECTIVE EPITAXY GROWTH; SIGE; SIGE QUANTUM WELLS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 54949157825     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.164     Document Type: Article

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