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Volumn 7660, Issue , 2010, Pages

Low resistance a-SiGe based microbolometer pixel for future smart IR FPA

Author keywords

amorphous silicon germanium alloy; IRFPA; microbolometer; uncooled IR detector

Indexed keywords

ADVANCED CMOS; AMORPHOUS SILICON (A-SI); AMORPHOUS SILICON FILM; AMORPHOUS SILICON GERMANIUM; BASIC PARAMETERS; CURRENT CAPABILITY; ELECTRICAL CHARACTERISTIC; FILM RESISTANCE; IR SENSOR; IRFPA; LOW RESISTANCE; MICROBOLOMETER; SI-GE FILMS; SIGE THIN FILM; UN-COOLED IR; UNCOOLED FPAS; UNCOOLED IR DETECTORS; VOLTAGE REQUIREMENT;

EID: 78650912938     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.850862     Document Type: Conference Paper
Times cited : (17)

References (5)
  • 2
    • 45549109991 scopus 로고    scopus 로고
    • Latest amorphous silicon microbolometer developments at LETI-LIR
    • Yon, J.J., Mottin, E., Tissot, J.L., "Latest amorphous silicon microbolometer developments at LETI-LIR," Proc. SPIE 6940, 69401W1-W8 (2008)
    • (2008) Proc. SPIE , vol.6940
    • Yon, J.J.1    Mottin, E.2    Tissot, J.L.3
  • 4
    • 0001752761 scopus 로고    scopus 로고
    • LETI/LIRs amorphous silicon uncooled microbolometer development
    • Yon, J.J., Tissot, J.L., Rothan, F., Vedel, C., Vilain, M., "LETI/LIRs amorphous silicon uncooled microbolometer development," Proc. SPIE 3379, 139-144 (1998).
    • (1998) Proc. SPIE , vol.3379 , pp. 139-144
    • Yon, J.J.1    Tissot, J.L.2    Rothan, F.3    Vedel, C.4    Vilain, M.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.