Synchrotron X-ray topography study of defects in indium antimonide P-I-N structures grown by metal organic vapour phase epitaxy

Journal of Materials Science: Materials in Electronics

Volumn 16, Issue 7, 2005, Pages 449-453

  Riikonen, Juha ^a   Tuomi, T ^a   Lankinen, A ^a   Sormunen, J ^a   Saynatjoki A ^a   Knuuttila, L ^a   Lipsanen, H ^a   McNally, P J ^b   O'Reilly, L ^b   Danilewsky, A ^c   Sipila H ^d   Vaijarvi S ^d   Lumb, D ^e   Owens, A ^e  

^a AALTO UNIVERSITY   (Finland)

^b DUBLIN CITY UNIVERSITY   (Ireland)

^c UNIVERSITY OF FREIBURG   (Germany)

^d Oxford Instruments Analytical Oy   (Finland)

^e EUROPEAN SPACE AGENCY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; CRYSTAL DEFECTS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTODIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILANES; SURFACE STRUCTURE; SURFACE TOPOGRAPHY; X RAY DIFFRACTION ANALYSIS; ZINC;

DOPANT SOURCES; DYNAMICAL DIFFRACTION IMAGES; INDIUM ANTIMONIDE; X RAY TOPOGRAPHY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 24944548232     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-005-2313-5     Document Type: Article

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