Novel InSb-based quantum well transistors for ultra-high speed, low power logic applications

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn 3, Issue , 2004, Pages 2253-2256

  Ashley, T ^a   Barnes, A R ^a   Buckle, L ^a   Datta, S ^b   Dean, A B ^a   Emeny, M T ^a   Fearn, M ^a   Hayes, D G ^a   Hilton, K P ^a   Jefferies, R ^a   Martin, T ^a   Nash, K J ^a   Phillips, T J ^a   Tang, W H A ^a   Wilding, P J ^a   Chau, R ^b  

^a QINETIQ   (United Kingdom)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRON MOBILITY; GATES (TRANSISTOR); SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TRANSCONDUCTANCE;

GATE LENGTH; HALL MEASUREMENTS; QUANTUM WELL FIELD-EFFECT TRANSISTORS; ROOM TEMPERATURE;

FIELD EFFECT TRANSISTORS;

EID: 21744442652     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. T. Ashley, A. B. Dean. C. T. Elliott, R. Jefferies, F. Khaleque and T. J. Phillips, IEDM Technical Digest, p.751 (1997).
2. K. Kuhn, R. Basco, D. Becher, M. Hattendorf, P. Packan, I. Post. P. Vandervoorn and I. Young, Symposium on VLSI Technology, June, (2004).
3. R. Chau, B. Doyle, M. Doczy, S. Datta, S. Hareland, B. Jin, J. Kavalieros and M. Metz, Device Research Conference, 23-25, p. 123 (2003).