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Applied Physics Letters

Volumn 96, Issue 23, 2010, Pages

Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors

(4) Lind, Erik a Niquet, Yann Michel b Mera, Hector b Wernersson, Lars Erik a

a LUND UNIVERSITY (Sweden)

b UNIV GRENOBLE ALPES (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE EFFECTS; CAPACITANCE VOLTAGE CHARACTERISTIC; EFFECTIVE MASS; INAS; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; NARROW BAND GAP; NON PARABOLICITY; OXIDE LAYER; TIGHT BINDING;

CAPACITORS; ENERGY GAP; HAFNIUM COMPOUNDS; SEMICONDUCTING INDIUM;

CAPACITANCE;

EID: 77953501984 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3449559 Document Type: Article

Times cited : (27)

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