Effects of different annealing atmospheres on the surface and microstructural properties of ZnO thin films grown on p-Si (1 0 0) substrates

Applied Surface Science

Volumn 257, Issue 17, 2011, Pages 7516-7520

  Shin, J W ^a   No, Y S ^b   Lee, J Y ^c   Kim, J Y ^d   Choi, W K ^e   Kim, T W ^b  

^a Korea Basic Science Institute (KBSI)   (South Korea)

^b Hanyang University   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^d Kwangwoon University   (South Korea)

^e Korea Institute of Science and Technology   (South Korea)

Author keywords

Different annealing; Microstructural property; ZnO thin film

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; METALLIC FILMS; NITROGEN; OPTICAL FILMS; OXYGEN; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC OXIDE;

ANNEALING ATMOSPHERES; CRYSTALLINITIES; HIGH-RESOLUTION TEM; MICRO-STRUCTURAL PROPERTIES; NITROGEN ATMOSPHERES; OXYGEN ATMOSPHERE; SI(1 0 0); ZNO THIN FILM;

THIN FILMS;

EID: 79957469877     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.03.071     Document Type: Article

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