Effects of annealing treatment on the formation of CO 2 in ZnO thin films grown by metal-organic chemical vapor deposition

Applied Surface Science

Volumn 256, Issue 8, 2010, Pages 2606-2610

  Zheng, Gaolin ^a   Yang, Anli ^a   Wei, Hongyuan ^a   Liu, Xianglin ^a   Song, Huaping ^a   Guo, Yan ^a   Jia, Caihong ^a   Jiao, Chunmei ^a   Yang, Shaoyan ^a   Zhu, Qinsheng ^a   Wang, Zhanguo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Infrared absorption; Metal organic chemical vapor deposition; Surface; ZnO

Indexed keywords

ANNEALING; CARBON DIOXIDE; FOURIER TRANSFORMS; II-VI SEMICONDUCTORS; INDUSTRIAL CHEMICALS; INFRARED ABSORPTION; LIGHT ABSORPTION; METAL ANALYSIS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALS; OPTICAL FILMS; ORGANIC CHEMICALS; ORGANOMETALLICS; SURFACES; TEMPERATURE; X RAY DIFFRACTION; ZINC OXIDE;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); ANNEALING TEMPERATURES; ANNEALING TREATMENTS; CHEMICAL REACTION PROCESS; FOURIER TRANSFORMATIONS; METAL ORGANIC; POSTGROWTH ANNEALING; TRANSMISSION MEASUREMENTS;

THIN FILMS;

EID: 74149088647     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.10.109     Document Type: Article

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