Effect of thermal annealing on the microstructural and electrical properties of Al-doped ZnO thin films grown on n-Si (1 0 0) substrates

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 43, Issue 1, 2010, Pages 256-260

  Han, J H ^a   No, Y S ^b   Lee, J Y ^a   Kim, T W ^b   Kim, J Y ^c   Choi, W K ^d  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hanyang University   (South Korea)

^c Kwangwoon University   (South Korea)

^d Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO; AMORPHOUS PHASE; AMORPHOUS REGIONS; AS-GROWN; AZO THIN FILMS; DISLOCATION DENSITIES; ELECTRICAL PROPERTY; HIGH-RESOLUTION TEM; MICRO-STRUCTURAL; POLYCRYSTALLINE; SI(1 0 0); SINGLE GRAINS; TEM; THERMAL-ANNEALING; ZONE AXIS;

ALUMINUM; AMORPHOUS SILICON; ANNEALING; ELECTRIC PROPERTIES; GALVANOMAGNETIC EFFECTS; GRAIN BOUNDARIES; HALL MOBILITY; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION; ZINC OXIDE;

AMORPHOUS FILMS;

EID: 78649930473     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2010.07.019     Document Type: Article

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