Comparison between HDP CVD and PECVD silicon nitride for advanced interconnect applications

Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000

Volumn , Issue , 2000, Pages 76-78

  Yota, J ^a   Janani, M ^a   Camilletti, L E ^a   Kar Roy, A ^a   Liu, Q Z ^a   Nguyen, C ^a   Woo, M D ^a   Hander, J ^b   Van Cleemput, P ^b   Chang, W ^c   Chiou, W C ^c   Li, L J ^c   Chao, L C ^c   Jang, S M ^c   Yu, C H ^c   Liang, M S ^c  

^a Rockwell Semiconductor Systems   (United States)

^b Novellus Systems   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT INTERCONNECTS; NITRIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SILICON NITRIDE;

COPPER DIFFUSION; DAMASCENE ARCHITECTURES; HIGH DENSITY PLASMAS; HYDROGEN CONTENTS; INTERCONNECT APPLICATIONS; PECVD SILICON NITRIDE; PLASMAENHANCED CVD (PECVD); SILICON NITRIDE FILM;

PLASMA CVD;

EID: 84962835824     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2000.854287     Document Type: Conference Paper

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