Coplanar amorphous silicon thin film transistor fabricated by inductively coupled plasma chemical vapor deposition

Journal of Applied Physics

Volumn 84, Issue 7, 1998, Pages 4006-4012

  Kim, Sung Ki ^a   Choi, Young Jin ^a   Cho, Kyu Sik ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; FABRICATION; HYDROGEN; NITRIDES; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; THIN FILM TRANSISTORS;

HYDROGENATED AMORPHOUS SILICON; INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITION;

AMORPHOUS FILMS;

EID: 0032185906     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368581     Document Type: Article

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