Thermo-piezochemistry of InAs on GaAs(001)

Applied Physics Letters

Volumn 80, Issue 25, 2002, Pages 4747-4749

  Bottomley, D J ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL STRESS; GAAS(001); GROWING SURFACES; INAS;

GALLIUM ARSENIDE; LIQUIDS; REACTION PRODUCTS; SEMICONDUCTING GALLIUM;

INDIUM ARSENIDE;

EID: 79956041738     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1489704     Document Type: Article

References (22)

1. V. A. Shchukin and D. Bimberg, Rev. Mod. Phys. 71, 1125 (1999). rmp RMPHAT 0034-6861
2. B. A. Joyce, T. S. Jones, and J. G. Belk, J. Vac. Sci. Technol. B 16, 2373 (1998). jvb JVTBD9 0734-211X
3. P. B. Joyce, T. J. Krzyzewski, G. R. Bell, B. A. Joyce, and T. S. Jones, Phys. Rev. B 58, R15981 (1998). prb PRBMDO 0163-1829
4. J. M. Garcia, J. P. Silveira, and F. Briones, Appl. Phys. Lett. 77, 409 (2000). apl APPLAB 0003-6951
5. D. J. Bottomley, J. Vac. Sci. Technol. B 17, 259 (1999). jvb JVTBD9 0734-211X
6. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Bohm, and G. Abstreiter, Phys. Rev. B 64, 245334 (2001). prb PRBMDO 0163-1829
7. H. M. Koduvely and A. Zangwill, Phys. Rev. B 60, R2204 (1999). prb PRBMDO 0163-1829
8. Thermochemical Data of Pure Substances, 3rd ed., edited by I. Barin (VCH, New York, 1995).
9. J. P. Silveira, J. M. Garcia, and F. Briones, J. Cryst. Growth 227/228, 995 (2001). jcr JCRGAE 0022-0248
10. Lange's Handbook of Chemistry, 12th ed., edited by J. A. Dean (McGraw-Hill, New York, 1979), pp. 9-100, 5-48.
11. A. Pimpinelli and J. Villain, Physics of Crystal Growth (Cambridge University Press, Cambridge, 1998), p. 123.
12. K. Onabe, Jpn. J. Appl. Phys., Part 1 21, 797 (1982). jjb JAPNDE 0021-4922
13. K. Onabe, Jpn. J. Appl. Phys., Part 1 21, 964 (1982). jjb JAPNDE 0021-4922
14. D. J. Bottomley, Appl. Phys. Lett. 72, 783 (1998). apl APPLAB 0003-6951
15. X. Zhang, D. W. Pashley, J. H. Neave, J. Zhang, and B. A. Joyce, J. Cryst. Growth 121, 381 (1992). jcr JCRGAE 0022-0248
16. N. Moll, M. Scheffler, and E. Pehlke, Phys. Rev. B 58, 4566 (1998). prb PRBMDO 0163-1829
17. D. J. Bottomley, Appl. Phys. Lett. 79, 1060 (2001). apl APPLAB 0003-6951
18. P. B. Joyce, T. J. Krzyzewski, G. R. Bell, T. S. Jones, S. Malik, D. Childs, and R. Murray, Phys. Rev. B 62, 10891 (2000). prb PRBMDO 0163-1829
19. T. R. Ramachandran, R. Heitz, P. Chen, and A. Madhukar, Appl. Phys. Lett. 70, 640 (1997). apl APPLAB 0003-6951
20. H. J. Lee, H. Ryu, J. Y. Leam, S. K. Noh, H. G. Lee, and S. Nahm, J. Cryst. Growth 172, 18 (1997). jcr JCRGAE 0022-0248
21. D. J. Bottomley, Jpn. J. Appl. Phys., Part 1 39, 4604 (2000). jjb JAPNDE 0021-4922
22. J. G. Belk, J. L. Sudijono, H. Yamaguchi, X. M. Zhang, D. W. Pashley, C. F. McConville, T. S. Jones, and B. A. Joyce, J. Vac. Sci. Technol. A 15, 915 (1997). jva JVTAD6 0734-2101