The physical origin of InAs quantum dots on GaAs(001)

Applied Physics Letters

Volumn 72, Issue 7, 1998, Pages 783-785

  Bottomley, D J ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004393966     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120892     Document Type: Article

References (22)

1. T. R. Ramachandran, R. Heitz, P. Chen, and A. Madhukar, Appl. Phys. Lett. 70, 640 (1997).
2. N. N. Ledentsov, M. Grundmann, N. Kirstaedter, O. Schmidt, R. Heitz, J. Bohrer, D. Bimberg, V. M. Ustinov, V. A. Shchukin, A. Yu. Egorov, A. E. Zhukov, S. Zaitsev, P. S. Kop'ev, Zh. I. Alferov, S. S. Ruvimov, A. O. Kosogov, P. Werner, U. Gosele, and J. Heydrenreich, Solid-State Electron. 40, 785 (1996).
3. Q. Xie, A. Kalburge, P. Chen, and A. Madhukar, IEEE Photonics Technol. Lett. 8, 965 (1996).
4. Physics of Group IV Elements and III-V compounds, Vol. 17a, Semiconductors, Landolt-Börnstein Numerical Data and Functional Relationships in Science and Technology, edited by O. Madelung (Springer, Berlin, 1982).
5. A. Jayaraman, W. Klement, Jr., and G. C. Kennedy, Phys. Rev. 130, 540 (1963).
6. D. J. Bottomley, Jpn. J. Appl. Phys., Part 2 36, L1464 (1997).
7. Thermochemical Data of Pure Substances, edited by I. Barin (VCH, New York, 1989).
8. J. F. Nye, Physical Properties of Crystals (Oxford University Press, London, 1967).
9. D. J. Bottomley and P. Fons, J. Cryst. Growth 160, 406 (1996).
10. C. Delamarre, J. Y. Laval, L. P. Wang, A. Dubon, and G. Schiffmacher, J. Cryst. Growth 177, 6 (1997).
11. J. D. Verhoeven, Fundamentals of Physical Metallurgy (Wiley, New York, 1975), Chap. 11.
12. K. Onabe, Jpn. J. Appl. Phys., Part 1 21, 797 (1982);
13. 21, 964 (1982).
14. X. Zhang, D. W. Pashley, J. H. Neave, J. Zhang, and B. A. Joyce, J. Cryst. Growth 121, 381 (1992).
15. C. Kittel, Introduction to Solid State Physics, 6th ed. (Wiley, New York, 1986), p. 502.
16. M. Hata, T. Isu, A. Watanabe, and Y. Katayama, J. Vac. Sci. Technol. B 8, 692 (1990).
17. H. Sunamura, N. Usami, Y. Shiraki, and S. Fukatsu, Appl. Phys. Lett. 66, 3024 (1995).
18. P. Schittenhelm, M. Gail, J. Brunner, J. F. Nützel, and G. Abstreiter, Appl. Phys. Lett. 67, 1292 (1995).
19. G. Abstreiter, P. Schittenhelm, C. Engel, E. Silveira, A. Zrenner, D. Meertens, and W. Jäger, Semicond. Sci. Technol. 11, 1521 (1996).
20. H. W. Yeom, M. Sasaki, S. Suzuki, S. Sato, S. Hosoi, M. Iwabuchi, K. Higashiyama, H. Fukutani, M. Nakamura, T. Abukawa, and S. Kono, Surf. Sci. 381, L533 (1997).
21. M. Zinke-Allmang, J. Vac. Sci. Technol. B 10, 1984 (1990).
22. Y. M. Mo, J. Kleiner, M. B. Webb, and M. G. Lagally, Phys. Rev. Lett. 66, 1998 (1991).