Surface stress effects during MBE growth of III-V semiconductor nanostructures

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 995-999

  Silveira, J P ^a   Garcia, J M ^a   Briones, F ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

A1. Interfaces; A1. Low dimensional structures; A1. Nanostructures; A1. Stresses; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL LATTICES; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MONOLAYERS; NANOSTRUCTURED MATERIALS; STRESS RELAXATION; SURFACE CHEMISTRY;

SURFACE STRESSES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035397237     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00966-6     Document Type: Conference Paper

References (17)