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Journal of Crystal Growth

Volumn 172, Issue 1-2, 1997, Pages 18-24

Structural defects in the growth of multiple periods of InAs quantum dots on a GaAs substrate

(6) Lee, Hwack Joo a Ryu, Hyun a Leam, Jae Y a Noh, Sam K a Lee, Hyung G b Nahm, Sahn c

a Korea Research Institute of Standards and Science (South Korea)

b Chungbuk National University (South Korea)

c Korea University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SUPERLATTICES;

DOT STRUCTURE; EPILAYER; MULTIPLE PERIODS; STRUCTURAL DEFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031546773 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00729-4 Document Type: Article

Times cited : (16)

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